2SC5053T100Q

Part points

• The 2SC5053T100Q is a high-frequency transistor chip with a power rating of 100 watts and a frequency range of up to 7 GHz. It is commonly used in high-power RF amplifiers and other high-frequency applications due to its reliability and performance. The chip is designed to provide high power output with low distortion, making it ideal for demanding RF circuit designs.

• Equivalent

  Some equivalent products of 2SC5053T100Q chip are BCP51, MCR18EZHF1001, and MMBT2907AK. These are general-purpose transistors with similar electrical characteristics and can be used as alternatives to the 2SC5053T100Q chip.

• Features

  - NPN Silicon Epitaxial Transistor - Ideal for high-frequency amplifier applications - High voltage and current capacity (VCEO = 160V, IC = 1A) - Low power dissipation - TO-220 package for easy mounting and heat dissipation - Wide operating temperature range (-55°C to +150°C)

• Pinout

  The 2SC5053T100Q is a through-hole type NPN silicon transistor with a TO-92 packaging. It has 3 pins: Base, Emitter, and Collector. It is typically used in low-power amplification or switching applications.

• Manufacturer

  The 2SC5053T100Q is manufactured by Toshiba Corporation, a Japanese multinational conglomerate known for producing a wide range of products, including semiconductors, consumer electronics, and home appliances. Toshiba Corporation is one of the largest electronics and electrical equipment companies in the world, with a focus on innovation and quality.

• Application Field

  The 2SC5053T100Q is a high-frequency transistor commonly used in RF (radio frequency) applications such as mobile communication devices, wireless networking, radar systems, and RF amplifiers. It offers high-speed switching and low noise characteristics, making it suitable for various high-frequency circuit designs.

• Package

  The 2SC5053T100Q chip is in a TO-92L package type. It is in a through-hole form and has a size of 4.8mm x 4.4mm x 2.9mm.