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MT40A512M16LY-062E IT:E Datasheet, Features and Applications

Update Time: May 07, 2024      Readership: 191

DDR (double data rate) memory technology has made significant advances since its inception. The evolution of DDR memory eventually led to the introduction of DDR4 SDRAM, which brought significant improvements in performance, capacity and reliability. This advancement has led to the development of high-performance modules such as the MT40A512M16LY-062E IT:E. This DDR4 SDRAM module embodies these advancements, delivering extremely fast data speeds and high capacities for modern computing needs. In this article, we will explore the MT40A512M16LY-062E IT:E features, pin configuration, applications, datasheet and more details about this DDR4 SDRAM module.



MT40A512M16LY-062E IT:E Description

MT40A512M16LY-062E IT:E is a DDR4 x16 memory IC for DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology. Here's a breakdown of its main components:

  • MT40A: This is the prefix used by Micron to identify its DDR4 SDRAM products. 512M16: This means the module has a capacity of 512 megabits (Mb) and is organized as 16 megabytes (MB) x 16 bits.
  • LY: This part of the model number is a code that represents DRAM technology and other Micron-specific features. 
  • 062E: This part of the model number indicates the speed grade of the module. In this case, "062E" means the speed grade is DDR4-2666, which means the module has a maximum data transfer rate of 2666 MT/s (millions of transfers per second).
  • IT: This suffix usually indicates the rated temperature range of the module. "IT" usually means industrial temperature range, which means the module is designed to operate reliably in harsher environmental conditions than commercial-grade components.

This memory module provides high-speed data storage and retrieval capabilities, making it an indispensable component in a variety of electronic devices, from smartphones and laptops to servers and network equipment.


Specifications


Type Parameter
Technology
 SDRAM - DDR4
Memory Type Volatile
Memory Format
 DRAM
Memory Size
 8Gbit
Memory Organization 512M x 16
Memory Interface
 Parallel
Clock Frequency
 1.6 GHz
Access Time 13.75 ns
Supply Voltage 1.14V ~ 1.26V
Operating Temperature -40°C ~ 95°C (TC)
Package / Case FBGA-96

MT40A512M16LY-062E IT:E Pin Configuration



Features of MT40A512M16LY-062E IT:E

The MT40A512M16LY-062E IT:E DDR4 SDRAM module is a high-speed dynamic random access memory that is internally organized into 16 banks (4 bank groups of 4 banks each for x4/x8 devices and 4 bank groups of 4 banks each for x16 devices). 2 bank groups containing 4 banks each). It uses double data rate (DDR) architecture for high-speed operation. The DDR4 architecture is based on the 8n prefetch architecture, which allows two data words to be transferred per clock cycle on the I/O pins. One read or write access to a device module consists of one 8n-bit wide, 4-clock cycle data transfer in the internal DRAM core and eight corresponding n-bit wide, 1/2 clock cycle data transfers. Masu. Transfers on I/O pins.

Read and write accesses to the device are burst-oriented, starting from a selected location and lasting for a burst length of eight or four chopped bursts in a programmed sequence. Operation begins with the registration of an ACTIVE command, followed by a READ or WRITE command. The address bits registered at the same time as the ACTIVE command are used to select the bank and row to access (BG[1:0] selects the x4/x8 bank group, BG0 selects the x16 bank group, etc.). BA[1:0] selects the bank and A[17:0] selects the row. Address bits registered at the same time as the READ or WRITE command select the starting column position for the burst operation. , used to determine whether to issue an automatic PRECHARGE command (via A10), and to select BC4 or BL8 mode on-the-fly (OTF) (via A12) if enabled in the mode register.

Before normal operation, the device must be powered on and initialized in a predefined manner. The following sections provide details about device reset and initialization, register definitions, command descriptions, and device operation.

Note: The NOP command is only allowed when exiting maximum power saving mode or entering geardown mode.


MT40A512M16LY-062E How IT:E ensures data security

Security is paramount in modern electronics, especially in data-sensitive applications. MT40A512M16LY-062E IT:E is equipped with various security features to ensure data integrity and protect against unauthorized access. Here's an overview of key security features:


  1. Error Checking and Correction (ECC): MT40A512M16LY-062E IT:E supports ECC, which helps detect and correct errors in data storage and transmission, increasing data reliability.
  2. Temperature monitoring: Memory modules contain temperature sensors to monitor operating temperatures. This feature helps prevent overheating that can lead to data loss or corruption.
  3. Secure Erase: MT40A512M16LY-062E IT:E supports secure erase function, which permanently deletes the data stored on the memory module to ensure that sensitive information cannot be recovered.
  4. Encryption support: Memory modules may support hardware-accelerated encryption, providing an additional layer of security for data stored on the device.
    Access Control: MT40A512M16LY-062E IT:E includes features such as access control, which limits who can access memory and what operations they can perform, helping to prevent unauthorized access.
  5. Physical Security: The physical design of the module may include security-enhancing features such as tamper-proof packaging and physical locks to protect the memory from physical attacks.

Implementing secure data storage practices is essential for data-sensitive applications. This includes encrypting sensitive data, regularly updating security protocols, and ensuring only authorized personnel have access to memory modules. The security features of MT40A512M16LY-062E IT:E make it a reliable choice for applications requiring high levels of data security.

 

Advantages of MT40A512M16LY-062E IT:E

High data transfer rate: MT40A512M16LY-062E IT:E provides high data transfer rate and is suitable for applications that require fast and efficient memory access. This is especially useful for tasks such as gaming, multimedia editing, and data processing where speed is important.


Improved Bandwidth Efficiency: MT40A512M16LY-062E IT:E is designed to improve bandwidth efficiency, allowing you to transfer more data in a given amount of time. This improves overall system performance and responsiveness.


Low Power Consumption: The MT40A512M16LY-062E IT:E is designed for low power consumption despite its high performance. This is important for mobile devices and other applications where power efficiency is an important consideration. Low power consumption extends battery life and reduces heat generation.


How to program and configure MT40A512M16LY-062E IT:E

To program and configure the MT40A512M16LY-062E IT:E memory module, you should typically follow guidelines found in datasheets or technical documentation provided by Micron Technology. The general steps required to program and configure such a memory module are as follows:


  1. Understanding the datasheet: First, read the MT40A512M16LY-062E IT:E memory module datasheet carefully. This provides detailed information about the module's features, specifications, and programming requirements.
  2. Interface compatibility: Ensure that the memory module is compatible with the interface (such as DDR4) and your system.
  3. Power: Provide the correct supply voltage and ensure proper power sequencing according to the datasheet.
  4. Timing Parameters: Set timing parameters such as CAS latency (CL), RAS to CAS delay (tRCD), and other parameters according to the specifications provided in the datasheet.
  5. Initialization: Initializes the memory module according to the initialization sequence specified in the datasheet. This may include configuring mode registers and other settings.
  6. Testing and validation: After programming and configuration, perform thorough testing and validation to ensure that the memory module is functioning properly.
  7. Operating environment: Make sure the memory module is operating within the specified temperature and voltage range.
  8. Software configuration: Depending on your application, you may need to configure memory modules using software. Please refer to the datasheet for details on how to do this.
  9. Documentation: Keep detailed documentation of programming and configuration settings for future reference.

It is important to refer to the specific datasheets and guidelines provided by Micron Technology for programming and configuring the MT40A512M16LY-062E IT:E memory module, as the exact steps may vary depending on the application and system requirements.


MT40A512M16LY-062E Design method using IT:E

Designs using the MT40A512M16LY-062E IT:E require careful consideration of circuit design, PCB layout, and signal integrity to ensure optimal performance and reliability. Important aspects to consider are:


1. Circuit design considerations:


  • Ensure proper termination of signal lines to minimize reflections and signal integrity issues.
  • Use appropriate decoupling capacitors near the device to stabilize the supply voltage and reduce noise.
  • Follow the recommended operating conditions and interface specifications listed in the datasheet.

2. PCB layout guidelines:


  • Place the MT40A512M16LY-062E IT:E device close to the memory controller to minimize trace length and signal degradation.
  • Uses a 4-layer PCB design with dedicated signal, power, and ground planes to reduce noise and crosstalk.
  • Follow recommended wiring guidelines to maintain signal integrity and minimize electromagnetic interference (EMI).

3. Designed for signal integrity and reliability:


  • To maintain signal integrity, use controlled-impedance traces for high-speed signals.
  • To reduce signal reflections, minimize the use of vias and avoid routing high-speed traces through split planes.
  • Perform signal integrity analysis and simulation to ensure your design meets timing and voltage specifications.

By following these guidelines, designers can effectively integrate his MT40A512M16LY-062E IT:E into their designs and provide reliable performance in demanding applications.


MT40A512M16LY-062E IT:E Application

The MT40A512M16LY-062E IT:E memory module is designed for use in a wide range of applications requiring fast and reliable memory performance. Common applications include:


  • Computing: Used in servers, desktop computers, and laptops to enhance system performance and multitasking capabilities.
  • Networking: Used in routers, switches, and network appliances to handle data processing and traffic management.
  • Storage solutions: Used with solid state drives (SSDs) and other storage devices to improve data access speeds and overall storage performance.
  • Embedded systems: Used in industrial automation, automotive, and other embedded systems for data processing and storage.
  • Telecommunications: Used in telecommunications equipment to handle data processing and network management tasks.
  • Consumer electronics: Used to store and process data in game consoles, digital cameras, and other consumer electronics.
  • Medical devices: These devices store and process data in medical imaging equipment, patient monitoring systems, and other medical devices.
  • Military and Aerospace: Used in military and aerospace applications where robustness and reliability are important.
  • Industrial Control Systems: Used in industrial control systems for data processing and control tasks.
  • In-vehicle electronics: Used in in-vehicle electronics to store and process data within a vehicle.

The MT40A512M16LY-062E IT:E memory module's high speed, reliability, and security features make it suitable for a wide range of applications where performance and data integrity are critical.


MT40A512M16LY-062E IT:E Manufacturer

MT40A512M16LY-062E IT:E memory modules are manufactured by Micron Technology, Inc., an American manufacturer of computer memory and computer data storage, including dynamic random access memory, flash memory, and USB flash drives. Micron Technology is known for high-quality memory products used in a variety of applications including consumer electronics, computing, networking, and automotive. The company is a leading player in the memory industry and focuses on research and development to remain at the forefront of memory technology. Micron products are widely used in smartphones, tablets, laptops, servers and other electronic devices.


MT40A512M16LY-062E IT:E Datasheet

Download MT40A512M16LY-062E IT:E Datasheet PDF.


Conclusion

MT40A512M16LY-062E IT:E DDR4 SDRAM offers high data transfer rates, improved bandwidth efficiency, and low power consumption, making it an attractive choice for modern electronic devices. Programming and configuring the MT40A512M16LY-062E IT:E requires attention to initialization and configuration settings, as well as utilization of a memory controller for efficient data transfer. Following programming considerations and best practices ensures optimal performance and reliability.

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Stella Brinkley

Stella Brinkley is a senior electronics engineer with 6 years of experience, specializing in the detailed study of resistor, transistor and package design. Her comprehensive knowledge allows her to drive innovation and excellence in the electronics industry.

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