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$5000NRVB1H100SFT3G
Part of MBR1H100SFT3G Series
Brands: Onsemi
Mfr.Part #: NRVB1H100SFT3G
Datasheet: NRVB1H100SFT3G Datasheet (PDF)
Package/Case: SOD-123FL
Product Type: Single Diodes
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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NRVB1H100SFT3G General Description
This Schottky Rectifier uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications, where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and 'Oring' of multiple supply voltages and any other application where performance and size are critical.
Features
- Low Forward Voltage
- Guardring for Stress Protection
- 175°C Operating Junction Temperature
- Epoxy Meets UL94 V-0
- Package Designed for Optimal Automated Board Assembly
- ESD Ratings:
Machine Model = C, Human Body Model = 3B - This is a Pb-Free Device
Mechanical Characteristics: - Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape
- Device Marking: L1H
- Polarity Designator: Cathode Band
- Weight: 11.7 mg (approximately)
- Case: Epoxy, Molded
- Lead Finish: 100% Matte Sn (Tin)
- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
- Device Meets MSL 1 Requirements
- AEC-Q101 Qualified and PPAP Capable
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
Application
- Power Conversion Circuit
- Reverse Battery Protection
- Protection and Free Wheeling Diode
- Gate Driving Circuit
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Status | Active | Compliance | PbAHP |
| Package Type | SOD-123FL | Case Outline | 498-01 |
| MSL Type | 1 | MSL Temp (°C) | 260 |
| Container Type | REEL | Container Qty. | 10000 |
| ON Target | Y | Configuration | Single |
| VRRM Min (V) | 100 | VF Max (V) | 0.76 |
| IRM Max (µA) | 40 | IO(rec) Max (A) | 1 |
| IFSM Max (A) | 50 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NRVB1H100SFT3G chip is a high voltage Silicon Carbide Schottky diode designed for use in power conversion applications. It offers low forward voltage drop, fast switching speeds, and high temperature operation, making it ideal for high power and efficiency requirements.
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Equivalent
The equivalent products of NRVB1H100SFT3G chip include NRVB1H100SFTWG, NRVB1H100SFTWG-M2, and NRVB1H100SFTWGM2J. These chips are similar in specifications and performance, making them suitable alternatives for the NRVB1H100SFT3G chip. -
Features
NRVB1H100SFT3G is a high-speed Schottky diode with a reverse voltage of 100V, forward current of 1A, and a small foot print. It has a low forward voltage drop, fast switching speed, and is suitable for high frequency applications. -
Pinout
The NRVB1H100SFT3G is a Dual Schottky Barrier Diode Array with a pin count of 3. Pin configuration: Pin 1 - Common cathode, Pin 2 - Anode, Pin 3 - Anode. This diode array is designed for voltage clamping protection in electronic circuits. -
Manufacturer
The manufacturer of the NRVB1H100SFT3G is ROHM Semiconductor. They are a Japanese company that specializes in the design and manufacture of integrated circuits, transistors, and other electronic components. ROHM Semiconductor primarily focuses on providing semiconductor solutions for various industries including automotive, consumer electronics, and industrial applications. -
Application Field
The NRVB1H100SFT3G is commonly used in radio frequency power amplifiers, RF transceivers, and microwave circuits. It is suitable for applications in wireless communication systems, radar systems, satellite communication, and industrial RF heating equipment. Its high power handling capability and high efficiency make it ideal for high-performance RF applications. -
Package
The NRVB1H100SFT3G chip comes in a SOT-23-3 package type, surface mount form, and measures 2.8mm x 2.9mm x 1.3mm in size.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products
