This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount!

NAND256W3A2BN6E

SLC NAND Flash Parallel 3V/3.3V 256M-bit 32M x 8 12us 48-Pin TSOP Tray

ISO14001 ISO9001 DUNS

Brands: Micron Technology Inc.

Mfr.Part #: NAND256W3A2BN6E

Datasheet: NAND256W3A2BN6E Datasheet (PDF)

Package/Case: 48-TFSOP

RoHS Status:

Stock Condition: 6,469 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for NAND256W3A2BN6E or email to us: Email: [email protected], we will contact you within 12 hours.

NAND256W3A2BN6E General Description

FLASH - NAND Memory IC 256Mbit Parallel 50 ns 48-TSOP

NAND256W3A2BN6E

Features

  • HIGH DENSITY NAND FLASH MEMORIES
  • – Up to 1 Gbit memory array
  • – Up to 32 Mbit spare area
  • – Cost effective solutions for mass storage applications
  • NAND INTERFACE
  • – x8 or x16 bus width
  • – Multiplexed Address/ Data
  • – Pinout compatibility for all densities
  • SUPPLY VOLTAGE
  • – 1.8V device: VDD = 1.7 to 1.95V
  • – 3.0V device: VDD = 2.7 to 3.6V
  • PAGE SIZE
  • – x8 device: (512 + 16 spare) Bytes
  • – x16 device: (256 + 8 spare) Words
  • BLOCK SIZE
  • – x8 device: (16K + 512 spare) Bytes
  • – x16 device: (8K + 256 spare) Words
  • PAGE READ / PROGRAM
  • – Random access: 12µs (max)
  • – Sequential access: 50ns (min)
  • – Page program time: 200µs (typ)
  • COPY BACK PROGRAM MODE
  • – Fast page copy without external buffering
  • FAST BLOCK ERASE
  • – Block erase time: 2ms (Typ)
  • STATUS REGISTER
  • ELECTRONIC SIGNATURE
  • CHIP ENABLE ‘DON’T CARE’ OPTION
  • – Simple interface with microcontroller
  • SERIAL NUMBER OPTION
  • HARDWARE DATA PROTECTION
  • – Program/Erase locked during Power transitions
  • DATA INTEGRITY
  • – 100,000 Program/Erase cycles
  • – 10 years Data Retention
  • RoHS COMPLIANCE
  • – Lead-Free Components are Compliant with the RoHS Directive
  • DEVELOPMENT TOOLS
  • – Error Correction Code software and hardware models
  • – Bad Blocks Management and Wear Leveling algorithms
  • – File System OS Native reference software
  • – Hardware simulation models

Specifications

Parameter Value Parameter Value
Package Tray Product Status Obsolete
Programmabe Not Verified Memory Type Non-Volatile
Memory Format FLASH Technology FLASH - NAND
Memory Size 256Mbit Memory Organization 32M x 8
Memory Interface Parallel Write Cycle Time - Word, Page 50ns
Access Time 50 ns Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package 48-TSOP
Base Product Number NAND256

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The NAND256W3A2BN6E is a 256-gigabit (32GB) NAND Flash memory chip manufactured by Samsung. It features a 3-bit per cell design, offering high capacity storage in a small form factor. This chip is commonly used in solid-state drives (SSDs), smartphones, tablets, and other electronic devices requiring fast and reliable data storage.
  • Equivalent

    The equivalent products of NAND256W3A2BN6E chip are MT29F2G08ABAEAWP, K9F2G08U0C-SCB0, S34ML02G100TFI000, SM2762A1BCME010, and IS36xML2G2G1LCG.
  • Features

    NAND256W3A2BN6E is a NAND flash memory chip with a capacity of 256GB. It has a 3.3V power supply, asynchronous page read and program operation, and an operating temperature range of -40°C to 85°C. This chip also features a 2KB page size, 6ns program time, and built-in ECC correction.
  • Pinout

    The NAND256W3A2BN6E is a 256Mbit NAND Flash memory chip with 48-pin WSON package. It has a 3V operating voltage and offers high-speed data transfer. The pin functions include power supply, ground, data input/output, and control signals for memory operations.
  • Manufacturer

    The manufacturer of NAND256W3A2BN6E is Micron Technology Inc. It is an American multinational corporation that specializes in computer memory and data storage technologies. Micron is one of the largest semiconductor companies in the world and is a leading manufacturer of NAND flash memory products.
  • Application Field

    The NAND256W3A2BN6E is commonly used in various applications such as solid-state drives (SSDs), digital cameras, music players, USB flash drives, and other consumer electronics devices that require high performance, reliability, and high storage capacity in a small form factor.
  • Package

    The NAND256W3A2BN6E chip has a BGA (Ball Grid Array) package type, with 48 ball contacts. It is a NAND Flash memory chip with a 256Gb (32GB) density, organized as 512M x 8bits. The dimensions of the chip are 10.0mm x 13.5mm with a thickness of 1.0mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend