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MJE253G 48HRS

PNP type transistors with a power dissipation of 15W

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: MJE253G

Datasheet: MJE253G Datasheet (PDF)

Package/Case: TO-225-3

RoHS Status:

Stock Condition: 9458 pcs, New Original

Product Type: Bipolar Transistors - BJT

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $0.618 $0.618
10 $0.513 $5.130
30 $0.461 $13.830
100 $0.408 $40.800
500 $0.332 $166.000
1000 $0.317 $317.000

In Stock:9458 PCS

- +

Quick Quote

Please submit RFQ for MJE253G or email to us: Email: [email protected], we will contact you within 12 hours.

MJE253G General Description

Bipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.5 W Through Hole TO-126

Features

  • High Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
  • High DC Current Gain @ IC = 200 mAdc
    hFE = 40-200
    hFE = 40-120 - MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product -
    fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available

Specifications

Parameter Value Parameter Value
Status Active Compliance PbAHP
Package Type TO-225-3 Case Outline 77-09
MSL Type NA MSL Temp (°C) 0
Container Type BLKBX Container Qty. 500
ON Target Y Polarity PNP
Type General Purpose VCE(sat) Max (V) 0.6
IC Cont. (A) 4 VCEO Min (V) 100
VCBO (V) 100 VEBO (V) 7
VBE(sat) (V) 1.8 VBE(on) (V) 1.5
hFE Min 40 hFE Max 180
fT Min (MHz) 40 PTM Max (W) 15
Pricing ($/Unit) $0.2076

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • MJE253G is a power transistor chip commonly used in audio amplifiers and power control circuits. It is a medium power Darlington transistor with high current gain and low saturation voltage, making it suitable for applications requiring high power output. The chip is also known for its high switching speed and low thermal resistance, making it a popular choice among electronics hobbyists and professionals.
  • Equivalent

    The MJE253G transistor's equivalents include MJE253 (without the "G" suffix), 2N6045, TIP147, and MJ15024. These alternatives offer similar electrical characteristics and can be used interchangeably in many applications.
  • Features

    The MJE253G is a silicon NPN power transistor designed for high-speed switching applications. It features a collector-emitter voltage of 400V, a collector current of 8A, and a power dissipation of 75W. This transistor is commonly used in power supply and motor control circuits.
  • Pinout

    The MJE253G is a bipolar power transistor with a TO-220 package. It typically has three pins: the collector, the base, and the emitter. It functions as a high-voltage switching and amplifier device in various electronic circuits, particularly in power supply and audio amplifier applications.
  • Manufacturer

    The MJE253G is manufactured by ON Semiconductor. ON Semiconductor is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy-efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices for diversified markets.
  • Application Field

    The MJE253G is a power transistor primarily used in applications requiring high power amplification and switching. Common applications include audio amplifiers, power supplies, motor control circuits, and industrial automation systems. Its high voltage and current handling capabilities make it suitable for various power electronics applications where efficient amplification and switching are required.
  • Package

    The MJE253G is a transistor with a TO-220 package type, a through-hole form factor, and a medium size, typically measuring around 10.4mm x 5.3mm x 16.6mm.

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  • Product

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  • quantity

    Minimum order quantity starts from 1pcs.

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    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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