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IRG4BC30KDPBF

N-CH 600V 28A 100W Trans IGBT Chip 3-Pin(3+Tab) TO-220AB Tube

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: IRG4BC30KDPBF

Datasheet: IRG4BC30KDPBF Datasheet (PDF)

Package/Case: TO-220-3

Product Type: IGBT Transistors

RoHS Status:

Stock Condition: 9555 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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IRG4BC30KDPBF General Description

The IRG4BC30KDPBF is a high-speed insulated gate bipolar transistor (IGBT) designed for high power applications. It features a voltage rating of 600V, a continuous current rating of 28A, and a non-repetitive peak current rating of 112A. The IGBT is housed in a TO-220AB package, making it suitable for mounting on a heat sink for efficient thermal management.The IRG4BC30KDPBF is designed for use in applications such as motor controls, power inverters, and high power switching circuits where fast switching speeds and high power handling capabilities are required. It features a low saturation voltage of 1.85V and a high input impedance of 15 ohms, making it energy efficient and easy to drive with standard logic level signals.This IGBT also features built-in short circuit protection and overcurrent protection, making it rugged and reliable in harsh operating conditions. It has a maximum junction temperature of 150°C, ensuring reliable operation even in high temperature environments.

Features

  • The IRG4BC30KDPBF is a 600V insulated gate bipolar transistor (IGBT) designed for high efficiency and fast switching applications
  • It features a low voltage drop and rugged design, making it suitable for motor control, power supply, and renewable energy systems
  • With a compact form factor and high reliability, it offers efficient power management solutions
  • Application

  • The IRG4BC30KDPBF is commonly used in power electronic applications such as motor drives, welding equipment, and power supplies
  • Its fast switching speed and high voltage capability make it suitable for these applications where efficiency and reliability are critical
  • Additionally, it can be utilized in inverters for renewable energy systems like solar and wind power
  • Specifications

    Parameter Value Parameter Value
    Product Category IGBT Transistors RoHS Details
    Technology Si Package / Case TO-220-3
    Mounting Style Through Hole Configuration Single
    Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.88 V
    Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 28 A
    Pd - Power Dissipation 100 W Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Brand Infineon Technologies
    Continuous Collector Current Ic Max 28 A Gate-Emitter Leakage Current 100 nA
    Height 8.77 mm Length 10.54 mm
    Product Type IGBT Transistors Factory Pack Quantity 1000
    Subcategory IGBTs Width 4.69 mm
    Part # Aliases SP001532644

    Shipping

    Shipping Type Ship Fee Lead Time
    DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
    Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
    UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
    TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
    EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
    REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

    Processing Time:Shipping fee depend on different zone and country.

    Payment

    Terms of payment Hand Fee
    Wire Transfer Wire Transfer charge US$30.00 banking fee.
    Paypal Paypal charge 4.0% service fee.
    Credit Card Credit Card charge 3.5% service fee.
    Western Union Western Union charge US.00 banking fee.
    Money Gram Money Gram charge US$0.00 banking fee.

    Guarantees

    1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

    2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

    Packing

    • Product

      Step1 :Product

    • Vacuum packaging

      Step2 :Vacuum packaging

    • Anti-static bag

      Step3 :Anti-static bag

    • Individual packaging

      Step4 :Individual packaging

    • Packaging boxes

      Step5 :Packaging boxes

    • bar-code shipping tag

      Step6 :bar-code shipping tag

    All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

    Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

    We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

    After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

    • ESD
    • ESD

    Part points

    • The IRG4BC30KDPBF is a high power insulated gate bipolar transistor (IGBT) chip commonly used in power electronic applications. It has a voltage rating of 600V and a current rating of 23A. The chip is designed to switch high voltages and currents with minimal loss and can be applied in motor control, inverters, and power supplies.
    • Equivalent

      Some potential equivalent products of the IRG4BC30KDPBF chip are the IRG4BC30K, IRG4BC30S, and IRG4BC30F. These are all insulated gate bipolar transistors (IGBTs) with similar specifications and features, making them suitable alternatives for various applications in power electronics.
    • Features

      The IRG4BC30KDPBF is a 600V insulated gate bipolar transistor (IGBT) that features a fast switching speed, low saturation voltage, and a high current rating of 31A. It is designed for use in high power applications such as motor control and power converters.
    • Pinout

      The IRG4BC30KDPBF is an Insulated Gate Bipolar Transistor (IGBT) with a pin count of 3. Its pins include the collector (C), emitter (E), and gate (G). The IGBT is commonly used in power electronic systems and its function is to switch or amplify electrical signals.
    • Manufacturer

      The manufacturer of the IRG4BC30KDPBF is Infineon Technologies. It is a German semiconductor manufacturer specializing in the production of power semiconductors, microcontrollers, and sensors. Infineon Technologies serves a wide range of industries, including automotive, industrial, and consumer electronics.
    • Application Field

      The IRG4BC30KDPBF is a high voltage insulated gate bipolar transistor (IGBT) that is commonly used in applications such as motor drives, power supplies, and renewable energy systems. It is designed to handle high current and voltage levels, making it suitable for high-power applications.
    • Package

      The IRG4BC30KDPBF chip comes in a TO-220AB package type, a D2Pak (TO-263) form, and has a small size suitable for electronic applications.

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    • quantity

      Minimum order quantity starts from 1pcs.

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      Lowest international shipping fee starts from $0.00

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      365 days quality guarantee for all products

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