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Infineon IPB107N20N3G
N-Channel 200 V 88A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Brands: INFINEON
Mfr.Part #: IPB107N20N3G
Datasheet: IPB107N20N3G Datasheet (PDF)
Package/Case: TO263
RoHS Status:
Stock Condition: 1000 pcs, New Original
Product Type: Varistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $3.281 | $3.281 |
| 10 | $2.862 | $28.620 |
| 30 | $2.611 | $78.330 |
| 100 | $2.359 | $235.900 |
| 500 | $2.243 | $1121.500 |
| 1000 | $2.190 | $2190.000 |
In Stock:1000 PCS
IPB107N20N3G General Description
Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| ECCN (US) | EAR99 | Part Status | Unconfirmed |
| SVHC | Yes | SVHC Exceeds Threshold | Yes |
| Automotive | No | PPAP | No |
| Category | Power MOSFET | Configuration | Single |
| Process Technology | OptiMOS | Channel Mode | Enhancement |
| Channel Type | N | Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 200 | Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 88 | Maximum Drain Source Resistance (mOhm) | 10.7@10V |
| Typical Gate Charge @ Vgs (nC) | 65@10V | Typical Gate Charge @ 10V (nC) | 65 |
| Typical Input Capacitance @ Vds (pF) | 5340@100V | Maximum Power Dissipation (mW) | 300000 |
| Typical Fall Time (ns) | 11 | Typical Rise Time (ns) | 26 |
| Typical Turn-Off Delay Time (ns) | 41 | Typical Turn-On Delay Time (ns) | 18 |
| Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel | Mounting | Surface Mount |
| Package Height | 4.57(Max) | Package Width | 9.45(Max) |
| Package Length | 10.31(Max) | PCB changed | 2 |
| Tab | Tab | Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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IPB107N20N3G is a power MOSFET chip designed for high performance and efficiency in power management applications. With a low on-resistance and high current handling capability, it is ideal for use in switching power supplies, motor controls, and other power electronics applications.
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Equivalent
The equivalent products of IPB107N20N3G chip are IRF640, STGW20NC60WD, IXTQ58N20P3, and IRF8732. These are all Power MOSFETs with similar specifications and characteristics to the IPB107N20N3G chip. -
Features
- Package Type: Power Transistor - Mounting Type: Surface Mount - Configuration: Single - Channel Mode: Enhancement Mode - Drain-Source Voltage: 200V - Drain Current: 107A - On-Resistance: 11mOhm - Power Dissipation: 222W -
Pinout
The IPB107N20N3G is a Power MOSFET with a pin count of 3. The functions of the pins are Gate (G), Drain (D), and Source (S). It is designed for high current applications with a low on-resistance. -
Manufacturer
The manufacturer of the IPB107N20N3G is Infineon Technologies. Infineon Technologies is a German multinational semiconductor manufacturer specializing in the production of power semiconductors and other electronic components. The company serves a wide range of industries, including automotive, industrial, and consumer electronics with its wide portfolio of products. -
Application Field
The IPB107N20N3G is commonly used in applications such as power supplies, motor control, and welding equipment due to its high performance characteristics including low on-resistance, fast switching speed, and high power efficiency. Additionally, it can also be utilized in automotive and industrial applications requiring high power handling capabilities. -
Package
The IPB107N20N3G chip comes in a TO263-3 package type and is in the form of a transistor. The size of this chip is approximately 6.5mm x 7.5mm x 2.3mm.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
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