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Infineon IPB107N20N3G 48HRS

N-channel MOSFET with a voltage rating of 200V

ISO14001 ISO9001 DUNS


Mfr.Part #: IPB107N20N3G

Datasheet: IPB107N20N3G Datasheet (PDF)

Package/Case: TO263

RoHS Status:

Stock Condition: 1,000 pcs, New Original

Product Type: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More


*All prices are in USD

Qty Unit Price Ext Price
1 $3.081 $3.081
10 $2.762 $27.620
30 $2.411 $72.330
100 $2.259 $225.900
500 $2.143 $1071.500
1000 $2.090 $2090.000

In Stock: 1,000 PCS

- +

Total : $3.081

excl. VAT

*Products eligible for online ordering ship within 1-2 business days,please contact us for exact shipping times.

Quick Quote

Please submit RFQ for IPB107N20N3G or email to us: Email: [email protected], we will contact you within 12 hours.

IPB107N20N3G General Description

Constructed with silicon and metal-oxide semiconductor technology, this FET offers reliable and efficient performance in a variety of electrical circuits. The TO-263AB package ensures easy installation and heat dissipation, while the green plastic housing provides durability and protection



Parameter Value Parameter Value
ECCN (US) EAR99 Part Status Unconfirmed
SVHC Yes SVHC Exceeds Threshold Yes
Automotive No PPAP No
Category Power MOSFET Configuration Single
Process Technology OptiMOS Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200 Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 88 Maximum Drain Source Resistance (mOhm) 10.7@10V
Typical Gate Charge @ Vgs (nC) 65@10V Typical Gate Charge @ 10V (nC) 65
Typical Input Capacitance @ Vds (pF) 5340@100V Maximum Power Dissipation (mW) 300000
Typical Fall Time (ns) 11 Typical Rise Time (ns) 26
Typical Turn-Off Delay Time (ns) 41 Typical Turn-On Delay Time (ns) 18
Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 175
Packaging Tape and Reel Mounting Surface Mount
Package Height 4.57(Max) Package Width 9.45(Max)
Package Length 10.31(Max) PCB changed 2
Tab Tab Standard Package Name TO-263
Supplier Package D2PAK


Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.


Terms of payment Hand Fee
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Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.


1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.


  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • IPB107N20N3G is a power MOSFET chip designed for high performance and efficiency in power management applications. With a low on-resistance and high current handling capability, it is ideal for use in switching power supplies, motor controls, and other power electronics applications.
  • Equivalent

    The equivalent products of IPB107N20N3G chip are IRF640, STGW20NC60WD, IXTQ58N20P3, and IRF8732. These are all Power MOSFETs with similar specifications and characteristics to the IPB107N20N3G chip.
  • Features

    - Package Type: Power Transistor - Mounting Type: Surface Mount - Configuration: Single - Channel Mode: Enhancement Mode - Drain-Source Voltage: 200V - Drain Current: 107A - On-Resistance: 11mOhm - Power Dissipation: 222W
  • Pinout

    The IPB107N20N3G is a Power MOSFET with a pin count of 3. The functions of the pins are Gate (G), Drain (D), and Source (S). It is designed for high current applications with a low on-resistance.
  • Manufacturer

    The manufacturer of the IPB107N20N3G is Infineon Technologies. Infineon Technologies is a German multinational semiconductor manufacturer specializing in the production of power semiconductors and other electronic components. The company serves a wide range of industries, including automotive, industrial, and consumer electronics with its wide portfolio of products.
  • Application Field

    The IPB107N20N3G is commonly used in applications such as power supplies, motor control, and welding equipment due to its high performance characteristics including low on-resistance, fast switching speed, and high power efficiency. Additionally, it can also be utilized in automotive and industrial applications requiring high power handling capabilities.
  • Package

    The IPB107N20N3G chip comes in a TO263-3 package type and is in the form of a transistor. The size of this chip is approximately 6.5mm x 7.5mm x 2.3mm.

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