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GT40Q321
Phase-out: 07-10
Brands: Toshiba
Mfr.Part #: GT40Q321
Datasheet: GT40Q321 Datasheet (PDF)
Package/Case: TO-3PN-3
Product Type: IGBT Transistors
RoHS Status:
Stock Condition: 7839 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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The GT40Q321 is a high power N-channel IGBT module designed for high-speed switching applications. It features a three-phase bridge configuration with an integrated gate driver for simplified control. The module offers a maximum collector current rating of 200 A and a maximum collector-emitter voltage rating of 1200 V, making it suitable for a wide range of power electronics applications.The GT40Q321 is built using advanced IGBT technology, ensuring high efficiency and reliability in operation. It also incorporates a built-in temperature sensor and overcurrent protection to ensure safe and reliable operation under varying load conditions. The module is designed to operate in harsh environments, with a wide operating temperature range and robust construction.The GT40Q321 is housed in a compact and lightweight package, making it easy to integrate into space-constrained applications. It features screw terminals for easy and secure connections, and is designed for easy mounting on a heatsink for efficient heat dissipation.
Features
- High power handling capability
- Low input capacitance
- Fast switching speed
- Low collector-emitter saturation voltage
- High-speed IGBTs optimized for automotive applications
- Designed for use in motor drive applications
Application
- Automotive industry - power systems for electric vehicles
- Industrial applications - motor control and power supplies
- Consumer electronics - inverter systems and power management
- Telecommunications - power amplifiers and signal processing
- Medical equipment - power supplies and instrumentation
- Aerospace - propulsion systems and power distribution
- Renewable energy - solar inverters and wind power systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | Technology | Si |
| Package / Case | TO-3PN-3 | Mounting Style | Through Hole |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Maximum Gate Emitter Voltage | - 25 V, + 25 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | GT40Q321 |
| Brand | Toshiba | Continuous Collector Current Ic Max | 42 A |
| Height | 19 mm | Length | 15.9 mm |
| Product Type | IGBT Transistors | Subcategory | IGBTs |
| Width | 4.8 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The GT40Q321 is a high voltage, high-speed switching NPN power transistor module commonly used in various power electronic applications such as motor drives, inverters, and UPS systems. It features a high current handling capacity and low switching losses, making it ideal for high power and high frequency applications.
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Equivalent
Some equivalent products of the GT40Q321 chip include STMicroelectronics L298N, Allegro A4988, and TI DRV8825. These chips are also commonly used for motor control, especially in applications such as 3D printers and CNC machines. -
Features
GT40Q321 is a 330W IGBT module with a compact package design, low conduction and switching losses, and high thermal efficiency. It has an integrated gate resistor for improved noise immunity, overcurrent protection, and short-circuit withstand capability. It is suitable for high power applications in industrial and automotive systems. -
Pinout
The GT40Q321 is a 12-pin IGBT (insulated-gate bipolar transistor) module. It consists of four IGBT dies and four diodes. The pins are typically labeled as follows: Emitter 1, Gate 1, Collector 1, Emitter 2, Gate 2, Collector 2, Collector 3, Diode 1 Anode, Diode 1 Cathode, Diode 2 Anode, Diode 2 Cathode, and Collector 4. -
Manufacturer
The GT40Q321 is manufactured by Toshiba, a Japanese multinational conglomerate company known for producing a wide range of products including semiconductors, power systems, and consumer electronics. Toshiba is one of the largest semiconductor manufacturers in the world and supplies a variety of electronic components for various industries. -
Application Field
The GT40Q321 is commonly used in power supply systems, industrial motor control, and automotive applications. It is suitable for switch-mode power supplies, inverters, and motor drives where high efficiency and ruggedness are required. -
Package
The GT40Q321 chip is a power module in a TO-3P package with quad MOSFET transistors. It has a size of 15mm x 18mm x 4.5mm.
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