FDG6323L

Part points

• The FDG6323L chip is a high-performance, low-RDS(ON) N-channel logic level enhancement-mode transistor. It features fast switching, low gate charge, and low threshold voltage, making it ideal for use in power management applications.

• Equivalent

  Some equivalent products of the FDG6323L chip include the FDG6333C, FDG6333L, and FDG6333NL chips. These are dual N-channel and P-channel enhancement mode MOSFET transistors commonly used in power management applications.

• Features

  1. High speed, low-dropout voltage regulator 2. Wide input voltage range of 3V to 18V 3. Adjustable output voltage from 1.25V to 16V 4. Maximum output current of 3A 5. Thermal shutdown and current limit protection 6. Fixed 0.8% accuracy over temperature and load variations

• Pinout

  The FDG6323L is a dual N-channel MOSFET with 8 pins. Pin 1 is the source of the first MOSFET, pin 2 is the gate of the first MOSFET, pin 3 is the drain of the first MOSFET, pin 4 is the source of the second MOSFET, pin 5 is the gate of the second MOSFET, pin 6 is the drain of the second MOSFET, and pins 7 and 8 are connected internally.

• Manufacturer

  The manufacturer of the FDG6323L is NXP Semiconductors, a Dutch-American semiconductor company. They specialize in designing and manufacturing a wide range of semiconductor products for various industries, including automotive, industrial, and consumer electronics. NXP Semiconductors is known for their high-quality and innovative solutions in the semiconductor market.

• Application Field

  The FDG6323L is commonly used in applications such as sensor interfaces, power management, battery charging, and motor control. It is suitable for use in portable devices, automotive systems, industrial equipment, and communication electronics where low power consumption and high switching speeds are required.

• Package

  The FDG6323L chip is housed in a surface-mount SC-70 package. It is in the form of a dual N/P-channel MOSFET with a size of 2.1mm x 2.0mm x 1.05mm.