This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount !

BDW84C

Bipolar (BJT) Transistor PNP - Darlington 100 V 15 A 130 W Through Hole TO-218-3

ISO14001 ISO9001 DUNS

Brands: CENTRAL SEMICONDUCTOR CORP

Mfr.Part #: BDW84C

Datasheet: BDW84C Datasheet (PDF)

Package/Case: TO-218-3

Product Type: Single Bipolar Transistors

RoHS Status:

Stock Condition: 5,030 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for BDW84C or email to us: Email: [email protected], we will contact you within 12 hours.

BDW84C General Description

Bipolar (BJT) Transistor PNP - Darlington 100 V 15 A 130 W Through Hole TO-218-3

Application

SWITCHING

Specifications

Parameter Value Parameter Value
Pbfree Code No Rohs Code No
Part Life Cycle Code Obsolete Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code ECCN Code EAR99
Samacsys Manufacturer Central Semiconductor Case Connection COLLECTOR
Collector Current-Max (IC) 15 A Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-218 JESD-30 Code R-PSFM-T3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 150 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application AMPLIFIER

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.5% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BDW84C is a high power NPN transistor designed for general purpose amplifier and switching applications. It has a maximum collector current of 15A and a maximum power dissipation of 90W. This chip is commonly used in audio amplifiers, power supplies, and motor control circuits due to its high power handling capabilities.
  • Equivalent

    Equivalent products of BDW84C chip include BDW84, BDW84A, BDW84B, MJE15031, MJEL15031, TIP150, TIP150G, TIP150G-D, TIP150-D, TIP150G-H, TIP150-H, TIP150G-S, and TIP150-S. These are all NPN Darlington transistors commonly used in high power applications.
  • Features

    BDW84C is a high power NPN transistor with a maximum collector current of 10A, a maximum collector-emitter voltage of 100V, and a maximum power dissipation of 125W. It is designed for use in audio amplifiers, power supply circuits, and general purpose switching applications.
  • Pinout

    The BDW84C is a PNP power transistor with a TO-218 package. It has a pin count of three, with the emitter connected to pin 1, the base connected to pin 2, and the collector connected to pin 3. It is commonly used in power amplifier and switching applications.
  • Manufacturer

    BDW84C is manufactured by STMicroelectronics. STMicroelectronics is a multinational semiconductor company that designs, develops, manufactures, and markets a range of semiconductor products. They specialize in providing solutions for automotive, industrial, consumer, and communication markets.
  • Application Field

    BDW84C is a high power NPN bipolar junction transistor commonly used in high voltage applications such as power amplifiers, audio amplifiers, and high voltage switching circuits. It is ideal for applications that require a high power handling capacity and high frequency operation.
  • Package

    The BDW84C is a TO-218 package type, designed in a form of transistor chip. Its size is approximately 10.94 mm x 16.67 mm and it is commonly used in audio amplifiers and power supplies.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • SFH 3710

    SFH 3710

    OSRAM

    Phototransistors SFH 3710-Z

  • SUD40N06-25L

    SUD40N06-25L

    Vishay

    The SUD40N06-25L MOSFET is designed for high power...

  • PD55025S

    PD55025S

    STMicroelectronics

    High frequency silicon transistor for RF power app...

  • IRF9130

    IRF9130

    Infineon

    IRF9130: P-Type MOSFET, 100V, 11A, TO-3 Package

  • IRF140

    IRF140

    TT Electronics

    100V Single N-Channel Hi-Rel MOSFET in a TO-204AE ...

  • ULN2804AN

    ULN2804AN

    texas instruments

    18-pin DIP package