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BC847BDW1T1G 48HRS

Bipolar Transistors - BJT 100mA 50V Dual NPN

ISO14001 ISO9001 DUNS

Brands: onsemi

Mfr.Part #: BC847BDW1T1G

Datasheet: BC847BDW1T1G Datasheet (PDF)

Package/Case: SC-70-6

RoHS Status:

Stock Condition: 9458 pcs, New Original

Product Type: Bipolar Transistors - BJT

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
10 $0.045 $0.450
100 $0.036 $3.600
300 $0.032 $9.600
3000 $0.028 $84.000
6000 $0.026 $156.000
9000 $0.024 $216.000

In Stock:9458 PCS

- +

Quick Quote

Please submit RFQ for BC847BDW1T1G or email to us: Email: [email protected], we will contact you within 12 hours.

BC847BDW1T1G General Description

The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.

Features

  • Device Marking:
    BC846BDW1T1 = 1B
    BC847BDW1T1 = 1F
    BC847CDW1T1 = 1G
    BC848BDW1T1 = 1K
    BC848CDW1T1 = 1L
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

Specifications

Parameter Value Parameter Value
Manufacturer: onsemi Product Category: Bipolar Transistors - BJT
RoHS: Details Mounting Style: SMD/SMT
Package / Case: SC-70-6 Transistor Polarity: NPN
Configuration: Dual Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 600 mV Maximum DC Collector Current: 100 mA
Pd - Power Dissipation: 380 mW Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Series: BC847BDW1 Packaging: MouseReel
Brand: onsemi Continuous Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 200 Height: 0.9 mm
Length: 2 mm Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000 Subcategory: Transistors
Technology: Si Width: 1.25 mm
Unit Weight: 0.000988 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BC847BDW1T1G chip is a NPN epitaxial silicon transistor used for general-purpose switching and amplification applications. It is housed in a SOT-363 package, making it compact and suitable for use in space-constrained designs. The transistor has a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V. Its low voltage drop makes it energy-efficient, and it exhibits high hFE for improved gain in amplification circuits.
  • Equivalent

    Some equivalent products of BC847BDW1T1G chip include BC847B, BC847A, BC847C, BC847BW and BC847AW.
  • Features

    The BC847BDW1T1G is a NPN transistor with a maximum collector current of 100mA, a maximum collector-emitter voltage of 50V, and a maximum power dissipation of 200mW. It has a low collector-emitter saturation voltage, low power dissipation, and high current gain.
  • Pinout

    The BC847BDW1T1G is a dual NPN transistor with a SOT-363 package. It has 6 pins, with Pin 1 as the base of Transistor 1, Pin 2 as the emitter of Transistor 1, Pin 3 as the collector of Transistor 1, Pin 4 as the base of Transistor 2, Pin 5 as the emitter of Transistor 2, and Pin 6 as the collector of Transistor 2.
  • Manufacturer

    The BC847BDW1T1G is manufactured by ON Semiconductor. ON Semiconductor is a leading global semiconductor company that offers a broad portfolio of power management, analog, logic, timing, connectivity, discrete, SoC, and custom devices. They provide innovative solutions that enable designers to solve their unique design challenges in various industries including automotive, industrial, consumer, and communications.
  • Application Field

    The BC847BDW1T1G is a dual NPN transistor that is commonly used in a wide range of applications, including amplification and switching circuits. It can be found in various electronic devices and systems, such as audio amplifiers, power supplies, motor drivers, and control circuits, where low-power and high-speed performance is required.
  • Package

    The BC847BDW1T1G chip comes in a SOT-363 package type. Its form is a dual NPN general-purpose switch in a small SMD package. The package size measures approximately 2.1mm x 1.25mm x 0.78mm.

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  • quantity

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