This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

2N4871 Transistor Pinout, Equivalent, Datasheet and Uses

Update Time: Jul 12, 2023      Readership: 2994

The 2N4871 transistor is a versatile electronic component widely used in various applications due to its reliable performance and compact design. This article provides a comprehensive guide to understanding the 2N4871 transistor, covering essential aspects such as its pinout configuration, equivalent alternatives, datasheet specifications, and practical applications. This guide will equip you with valuable knowledge to leverage the capabilities of the 2N4871 transistor effectively. So let's delve into the details and unlock the potential of this essential electronic component.




What is a 2N4871 Transistor?

The 2N4871 transistor is a specific type of electronic component that falls under the category of bipolar junction transistors (BJTs). It is specifically classified as a PNP transistor. The 2N4871 is designed to handle low-power switching applications, making it suitable for a variety of electronic circuits.

This transistor consists of three layers of semiconductor material, namely the emitter, base, and collector. By applying a small current at the base terminal, the 2N4871 can control the flow of current between the collector and emitter terminals. This ability to amplify and switch electrical signals makes it a crucial component in many electronic devices and systems.


2N4871 Transistor



2N4871 Transistor Specs

Here are the specifications for the 2N4871 transistor:

1. Transistor Type: PNP
2. Maximum Collector-Emitter Voltage (VCEO): 40V
3. Maximum Collector-Base Voltage (VCBO): 60V
4. Maximum Emitter-Base Voltage (VEBO): 5V
5. Collector Current Continuous (IC): 0.5A
6. Power Dissipation (Pd): 625mW
7. DC Current Gain (hFE): 100 (minimum) - 300 (typical)
8. Transition Frequency (fT): 60MHz (typical)
9. Base-Emitter Saturation Voltage (VBE(sat)): 1.0V (maximum) at IC = 500mA
10. Collector-Emitter Saturation Voltage (VCE(sat)): 0.3V (maximum) at IC = 500mA

These specifications outline the key electrical characteristics and performance parameters of the 2N4871 transistor. It is essential to refer to the manufacturer's datasheet for precise and detailed information as specifications may vary slightly between different manufacturers.




2N4871 Transistor Features

Here's a table describing the features of the 2N4871 transistor:


Feature Description
Transistor Type PNP
Maximum VCEO 40V
Maximum VCBO 60V
Maximum VEBO 5V
Collector Current (IC) 0.5A
Power Dissipation (Pd) 625mW
DC Current Gain (hFE) Minimum: 100<br>Typical: 300
Transition Frequency Typical: 60MHz
Base-Emitter Saturation Voltage (VBE(sat)) Maximum: 1.0V (at IC = 500mA)
Collector-Emitter Saturation Voltage (VCE(sat)) Maximum: 0.3V (at IC = 500mA)



2N4871 Transistor Pinout

The 2N4871 transistor has three pins: the Base (B), Emitter (E), and Collector (C). The emitter pin is typically identified by a larger physical size or a tab for easy identification.

When looking at the flat side of the transistor with the pins facing towards you, the pinout is as follows:

Pin 1: Base (B)
Pin 2: Emitter (E)
Pin 3: Collector (C)

It's important to correctly identify and connect the pins of the transistor in accordance with the circuit or datasheet specifications to ensure proper functionality and performance.


2N4871 Transistor Pinout



2N4871 Transistor Equivalent Parts

2N3906: This is a widely available PNP transistor with a maximum voltage rating of 40V and a collector current of 200mA. It has a similar pinout configuration and can be used as a substitute for low-power switching applications.


BC557: The BC557 is a PNP transistor commonly used for general-purpose amplification and switching. It has a maximum voltage rating of 45V and a collector current of 100mA. The pinout configuration of the BC557 is different, so attention should be given to the pin connections.


MPSA42: The MPSA42 is another PNP transistor suitable for low-power applications. It has a maximum voltage rating of 300V and a collector current of 500mA. While its electrical characteristics differ slightly, it can serve as a replacement in certain scenarios.


2N4871 Transistor




2N4871 Transistor Uses

The 2N4871 transistor finds applications in various electronic circuits where low-power switching and amplification are required. Here are three common uses of the 2N4871 transistor:


Switching Circuits: The 2N4871 transistor is frequently employed in digital and analog switching circuits. It can control the flow of current through a load by acting as a switch, allowing or blocking the passage of electrical signals. Its ability to handle moderate currents and voltages makes it suitable for applications such as relay drivers, motor control circuits, and logic-level conversions.


Amplification: The 2N4871 transistor is also utilized in amplification circuits, particularly for low-power audio and signal amplification. By appropriately biasing the transistor, it can amplify weak input signals to higher levels, enabling them to drive speakers, headphones, or other audio output devices. Additionally, the 2N4871 transistor can be used in pre-amplifier stages to enhance the strength of signals before they enter the main amplification circuitry.


Voltage Regulation: Another significant application of the 2N4871 transistor is in voltage regulation circuits. By employing the transistor in conjunction with other components, such as resistors and capacitors, it can help stabilize and regulate voltage levels within a circuit. This is particularly useful in power supply designs, where the 2N4871 transistor can assist in maintaining a consistent output voltage despite variations in input voltage or load conditions.


2N4871 Transistor



2N4871 Transistor Datasheet

The 2N4871 Transistor datasheet provides comprehensive technical information on this PNP transistor, including pin configuration, electrical characteristics, and performance specifications. This valuable resource can help you understand and utilize the 2N4871 effectively.


Click to view the form: 

2N4871 Transistor Datasheet


2N4871 Transistor




Conclusion

In conclusion, the article delved into the key aspects of the 2N4871 transistor, covering its pinout configuration, equivalent alternatives, datasheet specifications, and practical applications. Understanding the pinout enables proper integration into circuits, while knowledge of equivalent parts provides flexibility in component selection. The datasheet serves as a vital resource, offering detailed technical information for efficient utilization. Lastly, the transistor's uses in switching, amplification, and voltage regulation highlight its versatility in various electronic applications. Armed with this knowledge, readers can confidently harness the capabilities of the 2N4871 transistor in their projects and designs.

Share:

FAQFAQ

  • What is the recommended storage temperature for the 2N4871 transistor?

    The recommended storage temperature for the 2N4871 transistor is typically between -65°C to +150°C. Storing the transistor within this temperature range helps ensure its longevity and preserves its electrical characteristics.

  • What is the typical DC current gain (hFE) of the 2N4871 transistor?

    The 2N4871 transistor typically has a DC current gain (hFE) ranging from 100 to 300. This parameter indicates the transistor's ability to amplify current and is an important consideration in various circuit designs.

  • What is the maximum power dissipation of the 2N4871 transistor?

    The 2N4871 transistor has a maximum power dissipation (Pd) of 625mW, which indicates the maximum amount of power it can safely handle without exceeding its temperature limits.

Stella Brinkley

Stella Brinkley is a senior electronics engineer with 6 years of experience, specializing in the detailed study of resistor, transistor and package design. Her comprehensive knowledge allows her to drive innovation and excellence in the electronics industry.

Hot Products

  • TLP620-2

    TLP620-2

    Toshiba

    AC-IN 2-CH Transistor DC-OUT 8-Pin PDIP

  • BC141-16

    BC141-16

    Stmicroelectronics

    Bipolar Transistors - BJT NPN General Purpose

  • 2N7002DW-7-F

    2N7002DW-7-F

    Diodes Incorporated

    SOT363 Transistor

  • MMBT2907A-7-F

    MMBT2907A-7-F

    Central Semiconductor

    SOT-23 Packaged PNP Bipolar Junction Transistor wi...

  • IS181GB

    IS181GB

    Isocom Components

    Optoisolator Transistor Output 3750Vrms 1 Channel

  • MMBTA42LT1G

    MMBTA42LT1G

    Onsemi

    The MMBTA42LT1G is designed for various electronic...

  • NTF6P02T3G

    NTF6P02T3G

    Onsemi

    P-channel MOSFET Transistor with -20V voltage rati...

  • BC847BLT1G

    BC847BLT1G

    Onsemi

    This NPN transistor, BC847BLT1G, has a current han...

  • MMBT4403LT1G

    MMBT4403LT1G

    Onsemi

    PNP Bipolar Junction Transistor 40V 0.6A 300mW SOT...

  • MMBT4401LT1G

    MMBT4401LT1G

    Onsemi

    Transistor, General Purpose Bipolar Junction, NPN,...

  • NTD2955T4G

    NTD2955T4G

    Onsemi

    Featuring a 12-amp current capacity and a 60-volt ...

  • AO3414

    AO3414

    Alpha And Omega Semiconductor

    Power Field-Effect Transistor

  • TCST1103

    TCST1103

    VISHAY

    Transmissive Optical Sensor with Phototransistor O...

  • CSD18532Q5B

    CSD18532Q5B

    Texas Instruments

    Transistor MOSFET N-Channel Silicon 60V 100A 8-Pin...

  • SCT2650STER

    SCT2650STER

    SCT

    SCT2650STER is a high-power, high-voltage NPN tran...

  • ULN2003ANSR

    ULN2003ANSR

    TI

    50-V, 7-ch darlington transistor array, -20C to 70...

  • NDT2955

    NDT2955

    Onsemi

    -60V Power P-Channel Enhancement Mode Field Effect...

  • NX2301P

    NX2301P

    nexperia

    Trench MOSFET,P channel 20V,2A SOT23 NXP NX2301P P...

  • TD62783AFG

    TD62783AFG

    Toshiba

    TD62783AFG is a high-voltage, high-current Darling...

  • FGL40N120ANTU

    FGL40N120ANTU

    Onsemi

    IGBT Transistors with 1200V Voltage Rating

  • NTR4003NT1G

    NTR4003NT1G

    ON

    N-Channel MOSFET Transistor with 30V you can use 0...

  • NTR4101PT1G

    NTR4101PT1G

    ON

    P-channel MOSFET Transistor

  • MMBTA06LT1G

    MMBTA06LT1G

    Onsemi

    NPN Silicon Bipolar Transistor, TO-236 Package, 0....

  • BCR141W

    BCR141W

    Infineon Technologies

    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...

  • BCM846S

    BCM846S

    infineon

    Bipolar Transistors - BJT

  • BCM856S

    BCM856S

    infineon

    Bipolar Transistors - BJT

  • BCX69-10

    BCX69-10

    infineon

    Bipolar Transistors - BJT

  • BCX68-10

    BCX68-10

    infineon

    Bipolar Transistors - BJT

  • SMBTA06UPN

    SMBTA06UPN

    infineon

    Bipolar Transistors - BJT

  • BCR183W

    BCR183W

    infineon

    Bipolar Transistors - Pre-Biased

  • BCR108W

    BCR108W

    infineon

    Bipolar Transistors - Pre-Biased

  • BCR133S

    BCR133S

    infineon

    Bipolar Transistors - Pre-Biased

  • BCR185S

    BCR185S

    infineon

    Bipolar Transistors - Pre-Biased

  • BCR198S

    BCR198S

    infineon

    Bipolar Transistors - Pre-Biased

  • BCR185W

    BCR185W

    infineon

    Bipolar Transistors - Pre-Biased

  • NTE3032

    NTE3032

    NTE Electronics, Inc

    Phototransistors Top View TO-206AA, TO-18-3 Metal ...

  • SML-P12UTT86R

    SML-P12UTT86R

    Rohm Semiconductor

    Phototransistors 800nm Top View 0805 (2012 Metric)

  • PS1101WA-23-TR

    PS1101WA-23-TR

    Stanley Electric Co

    Phototransistors 880nm Top View 2-SMD, No Lead

  • EE-SX1088-W11

    EE-SX1088-W11

    Omron Electronics Inc-EMC Div

    Transistor Output Slotted Switch,

  • EE-SX1160-W11

    EE-SX1160-W11

    Omron Electronics Inc-EMC Div

    Photointerrupter Transmissive 9.5mm Phototransisto...

  • EE-SX3162-P2

    EE-SX3162-P2

    Omron Electronics Inc-EMC Div

    Photointerrupter Transmissive Phototransistor 3-Pi...

  • XC9223B082AR

    XC9223B082AR

    torex semiconductor

    Switching Voltage Regulators 1A DRIVER TRANSISTOR ...

  • XC9223B081AR

    XC9223B081AR

    torex semiconductor

    Switching Voltage Regulators 1A Driver Transistor ...

  • TPD2007F(EL,F)

    TPD2007F(EL,F)

    toshiba

    Power Switch ICs - Power Distribution Pb-F IPD POW...

  • BF998A-GS08

    BF998A-GS08

    vishay

    RF MOSFET Transistors RF N-Ch Dual Gate MOSFET, SO...

  • BLF4G10LS-120

    BLF4G10LS-120

    nxp

    RF MOSFET Transistors LDMOS TNS

  • MRF6S9125N

    MRF6S9125N

    nxp

    RF MOSFET Transistors

  • BF1005S

    BF1005S

    infineon

    RF MOSFET Transistors

  • TGF3020-SM

    TGF3020-SM

    qorvo

    RF MOSFET Transistors 4-6GHz 5W 32Volt P3dB 38.4 d...

  • TGF2965-SM

    TGF2965-SM

    qorvo

    RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB...

Popular Manufacturers