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IRFIBE30GPBF Power MOSFET Features, Specifications, Applications, and Datasheet

Update Time: Jan 21, 2025      Readership: 1582

The IRFIBE30GPBF MOSFET is designed for applications requiring high efficiency and low on-resistance. It has low threshold voltage and fast switching characteristics, making it ideal for high-performance power management systems. This device can handle significant currents, up to 120A (pulsed drain current), and operates reliably across a wide range of temperatures.



Overview of IRFIBE30GPBF

The IRFIBE30GPBF is a 30V N-channel MOSFET from Vishay designed for high-speed switching and efficient operation in power electronics. Encased in a TO-220-3 package, it is ideal for low-voltage, high-current power applications. As part of Vishay's third-generation power MOSFET lineup, it delivers a superior blend of fast switching, durable design, low on-resistance, and cost-effectiveness.

The TO-220 FULLPAK package eliminates the need for extra insulating components in commercial and industrial settings. The specialized molding compound ensures excellent isolation and low thermal resistance between the tab and the external heatsink. This isolation performance is equivalent to using a 100-micron mica barrier in a standard TO-220 device. The FULLPAK is easily mounted to a heatsink with either a single clip or a screw.


IRFIBE30GPBF Features

  • Isolated package design
  • High voltage isolation of 2.5 kV RMS (t = 60 s; f = 60 Hz)
  • Creepage distance from sink to lead: 4.8 mm
  • Rated for dynamic dV/dt performance
  • Low thermal resistance
  • Lead (Pb) free
  • Wide operating temperature range from -55°C to 150°C

IRFIBE30GPBF Specification


IRFIBE30GPBF Pinout

The IRFIBE30GPBF features the following pin configuration in its TO-220-3 package:

Pin Name Description Function
Gate Gate Pin Controls the flow of current between drain and source
Drain Drain Pin Current flows from drain to source
Source Source Pin Provides current return to the circuit

Absolute Maximum Ratings


How Does IRFIBE30GPBF Work

The IRFIBE30GPBF is specifically designed to deliver efficient performance in power management applications. Here's a detailed explanation of its working principle:

  • Power MOSFET Functionality: The IRFIBE30GPBF's core functionality is its MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) structure. The device operates as a switch that can rapidly turn on and off, controlling the current flow between the drain and source terminals. When turned on, the gate voltage controls the MOSFET's conductivity, allowing for efficient power switching with low on-resistance (Rds(on)).
  • Low Rds(on): The MOSFET in the IRFIBE30GPBF features a low on-resistance, which minimizes power losses during conduction. This ensures high efficiency when the device is used in power conversion applications, such as DC-DC converters, motor drivers, and power supplies.
  • Integrated Schottky Diode: Besides the MOSFET, the IRFIBE30GPBF also integrates a Schottky diode. Schottky diodes are known for their low forward voltage drop and fast switching characteristics. Integrating this diode helps improve efficiency in systems where a quick recovery time is required, particularly in high-speed switching applications.
  • Switching Operation: When the gate-to-source voltage (Vgs) exceeds a certain threshold, the MOSFET turns on, allowing current to flow from the drain to the source. The device can handle high switching frequencies, making it suitable for synchronous rectification, power converters, and inverters. The integrated Schottky diode aids in preventing reverse current flow during the MOSFET's off state.
  • Thermal Management: The device is designed to operate efficiently at high frequencies and power levels while managing heat dissipation. With its low Rds(on) and integrated thermal features, the IRFIBE30GPBF minimizes heat generation, allowing for better thermal management in compact designs.
  • Applications: The IRFIBE30GPBF is commonly used in power conversion circuits, including DC-DC converters, motor control, and power supplies. Its high efficiency and fast switching capabilities make it ideal for power management systems requiring low losses and high reliability.

In summary, the IRFIBE30GPBF uses its power MOSFET structure to control current flow and its integrated Schottky diode to handle reverse currents and improve efficiency. It is specifically engineered for power management applications, offering low losses, fast switching, and excellent thermal performance.


IRFIBE30GPBF Applications

The IRFIBE30GPBF is a power MOSFET designed for high-performance switching applications, particularly in power electronics. Below is an explanation of its key applications:


1. Battery Chargers

The IRFIBE30GPBF is commonly used in battery chargers to manage power delivery to the battery efficiently. In these systems, the MOSFET is a high-speed switching element, controlling current flow to the battery during charging. The MOSFET’s low on-resistance and fast switching characteristics help optimize charging efficiency, reduce power losses, and improve thermal management. Its ability to handle high current loads and switching speeds makes it ideal for consumer electronics and electric vehicle (EV) battery chargers, where fast and efficient charging is crucial.


2. Inverters

Inverters, which convert DC to AC power, rely on the IRFIBE30GPBF to manage high-voltage and high-current switching. The MOSFET is used in the power stage of the inverter to control the transition between positive and negative voltage cycles, thus enabling efficient power conversion. Whether it's for renewable energy applications like solar inverters or industrial motor drives, the IRFIBE30GPBF is a key component in ensuring that the inverter operates with low energy losses, high reliability, and fast switching capability, even under varying loads and voltages.


3. Power Supplies

The IRFIBE30GPBF is used in power supplies to manage the flow of power from the input to the output, convert AC to DC, or control voltage regulation. Its ability to handle high currents and voltages with minimal heat dissipation makes it a valuable component in consumer and industrial power supply units. It benefits applications requiring high efficiency, such as industrial, telecommunication, and computer power supplies. Its low on-resistance improves efficiency, while its robustness ensures reliable operation over long periods of use.


4. Switching Mode Power Supply (SMPS)

In Switching Mode Power Supplies (SMPS), the IRFIBE30GPBF is utilized to switch on and off in the power conversion process rapidly. SMPS systems require components that can handle high switching frequencies while minimizing losses to achieve high efficiency. The IRFIBE30GPBF, with its fast switching capability and low conduction losses, plays a critical role in providing stable power output while minimizing energy waste. It's commonly found in applications like telecommunications, industrial equipment, and consumer electronics, where compact size, high efficiency, and reliable performance are essential.


IRFIBE30GPBF Equivalents

Part Number Description Notes
IRLZ44N N-channel MOSFET, 47V, 47A, low Rds(on) Similar MOSFET with low on-resistance, suitable for high-efficiency switching applications.
STP75NF75 N-channel MOSFET, 75V, 80A, low Rds(on) Equivalent in terms of performance, offers higher voltage tolerance.
FDPF7N60NZ N-channel MOSFET, 60V, 7A, with integrated Schottky Diode Integrates a Schottky diode, similar to the IRFIBE30GPBF for power management.
IRLB8721 N-channel MOSFET, 30V, 62A, low Rds(on) Suitable for similar applications with efficient power management.
AO3400A N-channel MOSFET, 30V, 5.5A, low Rds(on) Smaller form factor, similar characteristics for lower power applications.
FQP30N06L N-channel MOSFET, 60V, 30A, low Rds(on) Equivalent in terms of power handling with lower voltage rating.

These parts are all N-channel MOSFETs with low Rds(on), suitable for power switching and power management applications. The equivalents listed above share similar performance characteristics with the IRFIBE30GPBF, though some may vary in voltage, current rating, or packaging. It's important to verify the exact requirements of your application to ensure compatibility.


Advantages and Disadvantages

IRFIBE30GPBF Advantages

  • High Current Handling: Handling up to 120A continuous, suitable for high-current applications.
  • Low On-Resistance: Reduces power losses and enhances efficiency.
  • Fast Switching: Ideal for high-frequency switching in power conversion systems.
  • Wide Operating Temperature Range: Suitable for automotive, industrial, and high-temperature environments.
  • Thermal Management: Low thermal resistance ensures effective heat dissipation.

IRFIBE30GPBF Disadvantages

  • Limited Drain-Source Voltage (Vds): With a maximum Vds of 30V, it may not be suitable for high-voltage applications.
  • Package Size: While effective for power handling, the TO-220-3 package may not be as space-efficient as surface-mount packages.

IRFIBE30GPBF Package

The TO-220-3 package offers:

  • High Power Dissipation: Excellent for heat dissipation with a large surface area for mounting.
  • Mechanical Durability: Robust design for use in industrial and automotive environments.
  • Easy Mounting: Standard package for use in through-hole mounting applications.


IRFIBE30GPBF Manufacturer

Vishay is a global leader in the development of semiconductors and passive components. Known for its innovations in power management and electronic components, Vishay provides high-performance solutions for automotive, industrial, and consumer applications.


IRFIBE30GPBF Datasheet

The datasheet includes detailed specifications, electrical characteristics, and thermal performance data for the IRFIBE30GPBF. It also provides guidelines for mounting, handling, and ensuring optimal performance in various power management and control applications. Electrical characteristics such as the on-resistance (Rds(on)), gate charge (Qg), and threshold voltage (Vgs(th)) are detailed, alongside thermal and power dissipation considerations.


Conclusion

The IRFIBE30GPBF is a high-performance 30V N-channel MOSFET ideal for a variety of low-voltage, high-current applications. Its low on-resistance, fast switching speed, and high thermal efficiency ensure optimal performance in DC-DC converters, motor control, and power supplies. Its TO-220-3 package makes it suitable for high-power applications where heat dissipation and efficient switching are critical.

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FAQFAQ

  • What is the primary application of the IRFIBE30GPBF?

    The IRFIBE30GPBF is primarily used in power management applications, such as DC-DC converters, motor drivers, and synchronous rectifiers. Its low Rds(on) and integrated Schottky diode make it ideal for high-efficiency power switching in various electronic systems.

  • What is the voltage and current rating of the IRFIBE30GPBF?

    The IRFIBE30GPBF is rated for 30V and 30A currents, making it suitable for low-voltage, high-current applications, such as power supplies and motor control circuits.

  • How does the Rds(on) affect the performance of the IRFIBE30GPBF?

    The IRFIBE30GPBF's Rds(on) (drain-source resistance) is 0.010Ω, which is very low. This means the MOSFET has minimal power loss during conduction, resulting in higher efficiency and better thermal performance. A lower Rds(on) reduces heat generation in high-speed switching applications.

  • How does the IRFIBE30GPBF compare to other MOSFETs in terms of thermal performance?

    The IRFIBE30GPBF has excellent thermal performance due to its low Rds(on), which minimizes heat generation. However, thermal management will still depend on factors such as the design of the PCB, the use of heatsinks, and the overall power dissipation in the circuit. Adequate cooling measures should be implemented for optimal performance.

  • What is the significance of the integrated Schottky diode?

    The integrated Schottky diode in the IRFIBE30GPBF provides several advantages, including faster switching, lower forward voltage drop, and improved efficiency by preventing reverse current flow during off-state operations. This makes it particularly beneficial in power management circuits where reducing energy loss is crucial.

Stella Brinkley

Stella Brinkley is a senior electronics engineer with 6 years of experience, specializing in the detailed study of resistor, transistor and package design. Her comprehensive knowledge allows her to drive innovation and excellence in the electronics industry.

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